Which one is most suitable power device for high frequency (>100 KHz) switching application?

A. Bjt
B. Power mosfet
C. Schottky diode
D. Microwave transistor

Delay time is defined by the interval when_______________?

A. Gate current increases from 90 % to 100 % of its final value
B. Anode current reaches 10 % from forward leakage current
C. anode voltage drops from 100 % to 90 % of its actual value
D. all of these

A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?

A. Igbt
B. Fct
C. Mct
D. Gto

Rise time is defined by the interval when____________?

A. Gate current rises from 90 % to 100 % of it final value
B. Anode voltage drops from 90 % to 10 % of its initial value
C. Anode current rises 10 % to 90 % of its final value
D. Both b and c

A power MOSFET has three terminals called___________?

A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base

The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?

A. Turn on
B. Not turn on
C. Turn on if inductance is removed
D. Turn on if pulse frequency us increased to two times

Spread time is defined as the interval during which_____________?

A. Anode voltage drops from 10 % of its initial value to zero
B. Anode current rises from 90 % to its final value
C. Both (a) and (b)
D. Anode current rises from 10 % to 90 % of its final value

Maximum power loss occurs during_________________?

A. delay time
B. rise time
C. spread time
D. all

The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is___________?

A. 130 ãžâ¼s
B. 135 ãžâ¼s
C. 140 ãžâ¼s
D. 145 ãžâ¼s

The typical time of rising time lies between______________?

A. 10 – 20 μs
B. 40 – 60 μs
C. 1 – 4 μs
D. 90 – 100 μs