During reverse recovery time__________________?

A. Charge carrier of junction j2 recombined
B. Charge carrier of junction j1 is swept out
C. Charge carrier of junction j3 is swept out
D. Both b and c

During gate recovery time_____________?

A. charge carriers of j2 junction recombined
B. charge carriers of j2 junction is swept out
C. charge carrier of j1 junction removed
D. charge carriers of j3 junction is removed

Power transistor are type of___________?

A. B.jts
B. Mosfets
C. Igbts
D. All of above

Typical range of thyristor turn OFF time is______________?

A. 3 – 10 μs
B. 3 – 50 μs
C. 3 – 100 μs
D. 3 – 500 μs

Which of following is normally ON device?

A. Sit
B. Bjt
C. Triac
D. Igbt

Which statement is true ?

A. Reverse recovery time ( trr ) > gate recovery time (tgr)
B. Device turn off time ( tq ) > reverse recover time (trr)
C. Circuit turn off time > device turn off time ( tq )
D. All of these

Which of following is not a power transistor?

A. Igbts
B. Coolmos
C. Triac
D. Sits

ON state voltage drop across SCR lie between the range_____________?

A. 0 – 0.5 v.
B. 0.5 – 1 v.
C. 1 – 1.5 v.
D. 1.5 – 2 v.

SCRs are used in series to meet_______________?

A. High current demand
B. Low voltage demand
C. Low current demand
D. High voltage demand

Dynamic equalising circuit is useful____________?

A. To limit di / dt of scr
B. To limit dv / dt of scr
C. For voltage equalisation
D. Both b and c